منابع مشابه
Atomic-scale compensation phenomena at polar interfaces.
The interfacial screening charge that arises to compensate electric fields of dielectric or ferroelectric thin films is now recognized as the most important factor in determining the capacitance or polarization of ultrathin ferroelectrics. Here we investigate using aberration-corrected electron microscopy and density-functional theory to show how interfaces cope with the need to terminate ferro...
متن کاملOFFSETS AND POLARIZATION AT STRAINED AlN/GaN POLAR INTERFACES
The strain induced by lattice mismatch at the interface is responsible for the different value of the band discontinuities observed recently for the AlN/GaN (AlN on GaN) and the GaN/AlN (GaN on AlN) polar (0001) interface. We present a first-principles calculation of valence band offsets, interface dipoles, strain-induced piezoelectric fields, relaxed geometric structure, and formation energies...
متن کاملDynamics of electron transfer at polar molecule-metal interfaces: The role of thermally activated tunnelling Short Title: Dynamics of electron transfer at polar molecule-metal interfaces
Heterogeneous electron transfer across interfaces is frequently discussed on the basis of Marcus Theory taking into account rearrangements of the solvent along a nuclear coordinate q. The electron transfer process itself occurs via tunnelling through a barrier normal to the interface. The key point is not whether tunnelling occurs, but whether thermally activated solvent fluctuations initiate t...
متن کاملMany body effects at surfaces and interfaces
The past two decades have experienced the development of angle-resolved photoemission to the point that it can now provide crucial information on an energy scale that is relevant to many key problems in condensed matter physics. At the same time, our ability to prepare and characterize surfaces, interfaces, and thin films has improved to the extent that many exotic phases can be produced with a...
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ژورنال
عنوان ژورنال: Canadian Journal of Chemistry
سال: 1970
ISSN: 0008-4042,1480-3291
DOI: 10.1139/v70-140